Zero infrared reflectance anomaly in doped silicon lamellar gratings .2. Electric field amplitude distributions across the grating profile

Spatial (in-depth by lateral) electric field amplitude distributions in zero-reflectance binary lamellar gratings in increasingly doped n-Si irradiated by a normally incident TE-polarized plane electromagnetic wave of wavelength 10.6 mu m are studied. It is shown that the maximum of electric field amplitude in these gratings is enhanced over the incident field value both for dielectric- and metallic-like cases. For zero-reflectance the maximum of the electric field amplitude is located deep inside the grating line for dielectric-like Si, and deep inside the grating groove for metallic-like Si. In the latter case for non-zero reflectance the maximum of the electric field amplitude is located at the top surface of the grating.