Doping concentration dependence of room-temperature ferromagnetism for Ni-doped ZnO thin films prepared by pulsed-laser deposition

被引：175

作者：

Liu, X ^{[1
]}

Lin, F ^{[1
]}

Sun, L ^{[1
]}

Cheng, W ^{[1
]}

Ma, X ^{[1
]}

Shi, W ^{[1
]}

机构：

[1] E China Normal Univ, Dept Phys, Shanghai 200062, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 06期

关键词：

D O I：

10.1063/1.2170420

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality Ni-doped ZnO thin films of single phase with preferred c-axis growth orientation were formed on Si (100) substrates by pulsed-laser deposition at room temperature. The films exhibited room-temperature ferromagnetic behaviors with saturation magnetic moment per Ni atom of 0.37 mu(B),0.26 mu(B),0.25 mu(B) and 0.21 mu(B) for the Ni concentration of 1, 3, 5, and 7 at. %, respectively. The decrease of ferromagnetism with doping concentration demonstrates that ferromagnetism observed at room temperature is an intrinsic property of Ni-ZnO thin films, not from any secondary phase. (c) 2006 American Institute of Physics.

引用

页数：3

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