The growth of ZnO nano-wire by a thermal evaporation method with very small amount of oxygen

被引：22

作者：

Park, No-Kuk ^{[1
]}

Han, Gi Bo ^{[1
]}

Lee, Jong Dae ^{[1
]}

Ryu, Si Ok ^{[1
]}

Lee, Tae Jin ^{[1
]}

Chang, Won Chul ^{[2
]}

Chang, Chih Hung ^{[3
]}

机构：

[1] Yeungnam Univ, Sch Chem Engn & Technol, Natl Res Lab, Gyongsan 712749, Gyeongbuk, South Korea

[2] Pung Nam Semicon Tech Co, Chilgok, Gyeongbuk, South Korea

[3] Oregon State Univ, Dept Chem Engn, Corvallis, OR 97331 USA

来源：

CURRENT APPLIED PHYSICS | 2006年 / 6卷

关键词：

ZnO nano-wire; Oxygen content; Photoluminescence;

D O I：

10.1016/j.cap.2006.01.034

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Formation of ZnO nano-wire by a thermal evaporation method was studied in this work. The ZnO nano-wire has grown from metal Zn granule under O-2 environments at high temperature. We investigated the behavior of the ZnO nano-wire growth with the change of oxygen content in carrier gas (N-2). Zn granules were placed in an alumina boat. The boat was inserted in a horizontal tube furnace. The furnace temperature was maintained in the range of 700-1000 degrees C for 0.5-2 h. The oxygen contents were adjusted from 0.5 to 5 vol% by mass flow controller. The as-grown ZnO nano-wires were characterized by scanning electron microscope (SEM). ZnO nano-wire grew only at 1.6-2.0 vol% O-2 conditions. ZnO nano-wire did not grow when the oxygen content is either 0 vol% or higher than 2.5 vol%. From these results, it was confirmed that oxygen content in the thermal evaporation method is an important factor for the synthesis of the ZnO nano-wire. (C) 2006 Elsevier B.V. All rights reserved.

引用

页码：E176 / E181

页数：6

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