Extraction of the trap density and mobility in poly-CdSe thin films

被引:14
作者
Lee, MJ [1 ]
Lee, SC [1 ]
机构
[1] Univ London Imperial Coll Sci Technol & Med, Dept Elect & Elect Engn, Thin Film Lab, London SW7 2BT, England
关键词
D O I
10.1016/S0038-1101(99)00007-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Polycrystalline-CdSe films with 300 and 600 Angstrom thickness deposited by thermal evaporation and encapsulated with sputtered silicon dioxide were successively annealed in oxygen at 400 degrees C to reduce the carrier concentration. The carrier density and Hall mobility were measured at each step. The trap density and intragrain mobility have been extracted by applying the one-dimensional grain-boundary model. These two parameters were then used as inputs to the simulation package ATLAS, which considers the conduction in both the grain and grain-boundary. The one-dimensional simulated results confirmed the value of the trapping state density obtained by using the grain-boundary model. The mobility in the simulation which gave the best fit to experimental data was lower than that extracted by the grain-boundary model. The trap density was found to be 8.2+/-0.5 x 10(11)/cm(2) and 7.5+/-0.5 x 10(11)/ cm(2), and from the simulation the intragrain mobility was 110 and 230 cm(2)/V-s for 300- and 600-Angstrom-thick CdSe films, respectively. The simulated conductivity showed good agreement with experimental results. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:833 / 838
页数:6
相关论文
共 19 条
  • [1] ELLIS SG, 1986, J PHYS CHEM SOLIDS, V29, P1139
  • [2] KANEKO E, 1987, LIQUID CRYSTAL TV DI
  • [3] Kazmerski L. L., 1980, Polycrystalline and Amorphous Thin Films and Devices
  • [4] LANGFORD RM, 1996, THESIS U LONDON
  • [5] Lee M., UNPUB
  • [6] CONDUCTIVITY BEHAVIOR IN POLYCRYSTALLINE SEMICONDUCTOR THIN-FILM TRANSISTORS
    LEVINSON, J
    SHEPHERD, FR
    SCANLON, PJ
    WESTWOOD, WD
    ESTE, G
    RIDER, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1193 - 1202
  • [7] Thermal oxide on CdSe
    Masson, DP
    Lockwood, DJ
    Graham, MJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (04) : 1632 - 1639
  • [8] ORTON JW, 1980, REP PROG PHYS, V43, P81
  • [9] PHAN D, 1996, 3 YEAR PROJECT
  • [10] PINTO MR, 1985, PISCES 2B SUPPLEMENT