Self-assembled quantum dots:: Crossover from kinetically controlled to thermodynamically limited growth -: art. no. 236101

被引:103
作者
Meixner, M [1 ]
Schöll, E
Shchukin, VA
Bimberg, D
机构
[1] Tech Univ Berlin, Inst Theoret Phys, D-10623 Berlin, Germany
[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
关键词
D O I
10.1103/PhysRevLett.87.236101
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
By means of kinetic Monte Carlo simulations of the self-organized growth of quantum dots in strained semiconductor systems we resolve the seemingly contradictory features of kinetic versus thermodynamic behavior, e.g., with respect to the temperature dependence of the average dot size and their dispersion. We show that the size distribution immediately after deposition is kinetically controlled, with smaller islands for lower temperatures and larger islands for higher temperatures. For longer simulation times the kinetics leads to equilibration, and a crossover effect between the size distributions occurs, which is in good agreement with the predictions of thermodynamics.
引用
收藏
页码:236101 / 1
页数:4
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共 30 条
[11]  
MARCHENKO VI, 1981, JETP LETT+, V33, P381
[12]   SI(100) SURFACE UNDER AN EXTERNALLY APPLIED STRESS [J].
MEN, FK ;
PACKARD, WE ;
WEBB, MB .
PHYSICAL REVIEW LETTERS, 1988, 61 (21) :2469-2471
[13]   ACTIVATION-ENERGY FOR SURFACE-DIFFUSION OF SI ON SI(001) - A SCANNING-TUNNELING-MICROSCOPY STUDY [J].
MO, YW ;
KLEINER, J ;
WEBB, MB ;
LAGALLY, MG .
PHYSICAL REVIEW LETTERS, 1991, 66 (15) :1998-2001
[14]   Influence of surface stress on the equilibrium shape of strained quantum dots [J].
Moll, N ;
Scheffler, M ;
Pehlke, E .
PHYSICAL REVIEW B, 1998, 58 (08) :4566-4571
[15]   STABILITY OF PERIODIC DOMAIN-STRUCTURES IN A 2-DIMENSIONAL DIPOLAR MODEL [J].
NG, KO ;
VANDERBILT, D .
PHYSICAL REVIEW B, 1995, 52 (03) :2177-2183
[16]   ORIGIN OF SELF-ASSEMBLED QUANTUM DOTS IN HIGHLY MISMATCHED HETEROEPITAXY [J].
PRIESTER, C ;
LANNOO, M .
PHYSICAL REVIEW LETTERS, 1995, 75 (01) :93-96
[17]   Mass transfer in Stranski-Krastanow growth of InAs on GaAs [J].
Ramachandran, TR ;
Heitz, R ;
Chen, P ;
Madhukar, A .
APPLIED PHYSICS LETTERS, 1997, 70 (05) :640-642
[18]   SCALING OF HETEROEPITAXIAL ISLAND SIZES [J].
RATSCH, C ;
ZANGWILL, A ;
SMILAUER, P .
SURFACE SCIENCE, 1994, 314 (03) :L937-L942
[19]   Mechanism for coherent island formation during heteroepitaxy [J].
Ratsch, C ;
Smilauer, P ;
Vvedensky, DD ;
Zangwill, A .
JOURNAL DE PHYSIQUE I, 1996, 6 (04) :575-581
[20]   Ordering of self-assembled Si1-xGex islands studied by grazing incidence small-angle x-ray scattering and atomic force microscopy [J].
Schmidbauer, M ;
Wiebach, T ;
Raidt, H ;
Hanke, M ;
Kohler, R ;
Wawra, H .
PHYSICAL REVIEW B, 1998, 58 (16) :10523-10531