Spin-filter device based on the Rashba effect using a nonmagnetic resonant tunneling diode

被引：482

作者：

Koga, T ^{[1
]}

Nitta, J

Takayanagi, H

机构：

[1] NTT Corp, NTT Basic Res Labs, Kanagawa 2430198, Japan

[2] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[3] Japan Sci & Technol Corp, PRESTO, Nanostruct & Mat Property, Kawaguchi, Japan

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 88卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.88.126601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We propose an electronic spin-filter device that uses a nonmagnetic triple barrier resonant tunneling diode (TB-RTD). This device combines the spin-split resonant tunneling levels induced by the Rashba spin-orbit interaction and the spin blockade phenomena between two regions separated by the middle barrier in the TB-RTD. Detailed calculations using the InAlAs/InGaAs material system reveal that a splitting of a peak should be observed in the I-V curve of this device as a result of the spin-filtering effect. The filtering efficiency exceeds 99.9% at the peak positions in the I-V curve.

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页码：4 / 126601

页数：4

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