Hole trapping in ultrathin Al2O3 and ZrO2 insulators on silicon

被引：27

作者：

Afanas'ev, VV ^{[1
]}

Stesmans, A ^{[1
]}

机构：

[1] Katholieke Univ Leuven, Dept Phys, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 07期

关键词：

D O I：

10.1063/1.1447006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical injection of electron-hole pairs in 3-5 nm thick layers of SiO2, Al2O3, ZrO2 and their stacks on (100)Si is found to result in positive oxide charging, suggesting trapping of holes. In thin layers of the high-permittivity metal oxides (Al2O3, ZrO2), the positive charge exhibits a remarkable stability to neutralization by electrons which is neither observed in thicker layers of the same oxides nor in thermal SiO2. Most of the positive charge is associated with diamagnetic centers (possibly, protons). (C) 2002 American Institute of Physics.

引用

页码：1261 / 1263

页数：3

共 14 条

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