Gas sensing characteristics of zinc-tin complex oxide thin films with spinel-type structure

被引：8

作者：

Hiratsuka, N

Kobayashi, H

Uchida, H

Katsube, T

机构：

[1] Grad. Sch. of Sci. and Engineering, Saitama University, Urawa-shi, Saitama 338, 255, Shimo-Ohkubo

来源：

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 1996年 / 104卷 / 11期

关键词：

gas sensor; evaporation method; Zn2SnO4; thin film; gas selectivity;

D O I：

10.2109/jcersj.104.1048

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Zn-Sn metallic films were deposited on alumina substrates by an evaporation method, and then complex oxide films were fabricated by annealing in air. The relation between the formation of spinel-type Zn2SnO4 and their sensing characteristics to i-C4H10 gas was studied. Both ZnO and SnO2 films annealed at 500 degrees C had higher sensitivity to i-C4H10 than the complex oxide films of ZnO and SnO2 because of fine crystallinity. The sensitivities of the complex oxide films increased with increasing annealing temperature from 600 to 800 degrees C, because of the improved crystallinity. Higher sensitivities were obtained by laminating the complex oxide films. Moreover, the gas selectivity of Zn-Sn complex oxide films for several kinds of gases was investigated. The Zn-Sn complex oxide film had a very high sensitivity to NO2 gas.

引用

页码：1048 / 1051

页数：4

共 8 条

[1] TIN DIOXIDE THIN-FILM GAS SENSOR PREPARED BY CHEMICAL-VAPOR-DEPOSITION - INFLUENCE OF GRAIN-SIZE AND THICKNESS ON THE ELECTRICAL-PROPERTIES [J].