Dynamic properties of InAs self-assembled quantum dots for spectral hole burning memory application

In this paper we report the dynamic properties of InAs self-assembled quantum dots for spectral hole burning memory applications. We measured the time constant of electron transport between InAs self-assembled quantum dots and the n-GaAs substrate by making use of the frequency dependence of the CV signal due to the InAs clots. We obtained a time constant of 2.1 mu sec from experiments. The experimental results ate well explained by equivalent circuit calculations and the theoretically calculated CR time constant. The time constant is expected to reach the sub-picosecond range in samples with a 10 nm barrier thickness.