Ultrafast carrier dynamics in semiconductor quantum dots

被引：164

作者：

Klimov, V

Bolivar, PH

Kurz, H

机构：

[1] Institut für Halbleitertechnik II, Rheinish Westfälische Technische Hochschule Aachen, D-52074 Aachen

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.53.1463

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dynamics of band-edge photoluminescence (PL) in CdS nanocrystals (NC's) dispersed in a glass matrix are studied with the femtosecond up-conversion technique. The time-resolved PL spectra exhibit several discrete features (three of them are in the NC energy band gap) which are not pronounced in a cw PL spectrum. The initial stage of a PL decay is governed by a depopulation of the lowest extended states due to carrier trapping (localization) on the time scale of 1 ps. The low-energy bands originating from the extended-to-localized state transitions exhibit extremely fast buildup dynamics (rise time is 400-700 fs) which is explained by the preexisting occupation of the localized states.

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页码：1463 / 1467

页数：5

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