Device physics of organic light-emitting diodes based on molecular materials

被引:577
作者
Bruetting, Wolfgang [1 ]
Berleb, Stefan [1 ]
Mueckl, Anton G. [1 ]
机构
[1] Univ Bayreuth, D-95440 Bayreuth, Germany
关键词
Organic light-emitting diodes; Charge carrier transport; Space-charge limited conduction; Charge carrier mobility; Traps;
D O I
10.1016/S1566-1199(01)00009-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electrical transport in single- and hetero-layer organic light-emitting diodes based on aromatic amines like N,N'-diphenyl-N,N'-bis(3-methylpheny1)-1,1' -biphenyl-4,4'-diamine (TPD) or N,N'-diphenyl-N,N'-bis (1-naphthyl)-1,1'-bipheny1-4,4'-diamine (NPB) and the aluminium chelate complex Alq (tris(8-hydroxyquinolato)aluminium) has been investigated as a function of temperature and organic layer thickness. It is shown that the thickness dependence of the current-voltage (/-V) characteristics provides a unique criterion to discriminate between (1) injection limited behaviour, (2) trap-charge limited conduction with an exponential trap distribution and a field-independent mobility, and (3) trap-free space-charge limited conduction (SCLC) with a field and temperature dependent mobility. The /-V characteristics of NPB-based hole-only devices with indium-tin oxide anodes are neither purely injection nor purely space-charge limited, although the current shows a square-law dependence on the applied voltage. In Al/Alq/ Ca electron-only devices with Alq thickness in the range 100-350 nm the observed thickness and temperature dependent /-V characteristics can be described by SCLC with a hopping-type charge carrier mobility. Additionally, trapping in energetically distributed trap states is involved at low voltages and for thick layers. The electric field and temperature dependence of the charge carrier mobility in Alq has been independently determined from transient electroluminescence. The obtained values of the electron mobility are consistent with temperature dependent /-V characteristics and can be described by both the phenomenological Poole-Frenkel model with a zero-field activation energy AE = 0.4-0.5 eV and the Gaussian disorder model with a disorder parameter o- = 100 meV. Measurements of the bias-dependent capacitance in NPB/Alq hetero-layer devices give clear evidence for the presence of negative charges with a density of about 6.8 x 1011 cm-2 at the organic-organic interface under large reverse bias. This leads to a non-uniform electric field distribution in the hetero-layer device, which has to be considered in device description. 0 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1 / 36
页数:36
相关论文
共 130 条
[1]   TIME-RESOLVED SPACE CHARGE-LIMITED INJECTION IN A TRAP-FREE GLASSY POLYMER [J].
ABKOWITZ, M ;
FACCI, JS ;
STOLKA, M .
CHEMICAL PHYSICS, 1993, 177 (03) :783-792
[2]   ORGANIC ELECTROLUMINESCENT DEVICE WITH A 3-LAYER STRUCTURE [J].
ADACHI, C ;
TOKITO, S ;
TSUTSUI, T ;
SAITO, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (04) :L713-L715
[3]   ELECTROLUMINESCENCE IN ORGANIC FILMS WITH 3-LAYER STRUCTURE [J].
ADACHI, C ;
TOKITO, S ;
TSUTSUI, T ;
SAITO, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (02) :L269-L271
[4]  
Adachi C., 1990, ACTA POLYTECH SCAND, V170, P215
[5]   EFFICIENCY OF CHARGE RECOMBINATION IN ORGANIC LIGHT-EMITTING-DIODES [J].
ALBRECHT, U ;
BASSLER, H .
CHEMICAL PHYSICS, 1995, 199 (2-3) :207-214
[6]   LANGEVIN-TYPE CHARGE-CARRIER RECOMBINATION IN A DISORDERED HOPPING SYSTEM [J].
ALBRECHT, U ;
BASSLER, H .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1995, 191 (02) :455-459
[7]  
[Anonymous], 1940, CHEM ED, DOI DOI 10.1021/ED018P249.1
[8]   Current injection from a metal to a disordered hopping system.: II.: Comparison between analytic theory and simulation [J].
Arkhipov, VI ;
Wolf, U ;
Bässler, H .
PHYSICAL REVIEW B, 1999, 59 (11) :7514-7520
[9]   Charge injection into light-emitting diodes: Theory and experiment [J].
Arkhipov, VI ;
Emelianova, EV ;
Tak, YH ;
Bassler, H .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (02) :848-856
[10]   Very high-efficiency green organic light-emitting devices based on electrophosphorescence [J].
Baldo, MA ;
Lamansky, S ;
Burrows, PE ;
Thompson, ME ;
Forrest, SR .
APPLIED PHYSICS LETTERS, 1999, 75 (01) :4-6