On the diffusion of Al into Si under the influence of laser radiation from a Nd:YAG laser

被引：5

作者：

Demireva, D ^{[1
]}

Lammel, B ^{[1
]}

机构：

[1] FH WIRTSCHAFT & TECH MITTWEIDA,D-0925 MITTWEIDA,GERMANY

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1997年 / 30卷 / 14期

关键词：

D O I：

10.1088/0022-3727/30/14/003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mle present the results of measurements of the concentration profiles of Al atoms introduced into p-Si by laser irradiation from a Nd:YaG laser. The radiation treatments were performed with the laser either in the CMI or in the Q-switched mode. It was found that limiting concentrations of introduced aluminium atoms in the Si substrate were reached under irradiation in CW operation and that the concentrations measured under irradiation in the Q-switched made were up to two orders of magnitude higher than those measured for CW operation. For comparison the distribution profiles of Al atoms in a Si substrate for various diffusion coefficients and times of interaction were calculated.

引用

页码：1972 / 1975

页数：4

共 13 条

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