Sensitization of Er3+ emission at 1.5 μm in SiO2 thermally grown on silicon by coimplantation of Yb

被引：19

作者：

Kozanecki, A ^{[1
]}

Homewood, K ^{[1
]}

Sealy, BJ ^{[1
]}

机构：

[1] Univ Surrey, Surrey Ctr Res Ion Beam Applicat, Guildford GU2 5XH, Surrey, England

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 06期

关键词：

D O I：

10.1063/1.124515

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effects of Yb codoping on the photoluminescence of Er3+ ions at room temperature in SiO2 films thermally grown on silicon are investigated. We demonstrate that for an excitation wavelength of 488 nm Yb ions act as efficient sensitizers of the I-4(13/2)-I-4(15/2) emission of Er3+ ions. We have found that for the fixed dose of Yb the Er3+ intensity is directly proportional to the Er concentration. Enhancement by a factor of 15 due to Yb codoping has been observed. A model of the mechanism responsible for sensitization is discussed. (C) 1999 American Institute of Physics. [S0003-6951(99)03432-4].

引用

页码：793 / 795

页数：3

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