Architectured ZnO photoelectrode for high efficiency quantum dot sensitized solar cells

被引：115

作者：

Tian, Jianjun ^{[1
,3
]}

Zhang, Qifeng ^{[2
]}

Uchaker, Evan ^{[2
]}

Gao, Rui ^{[2
]}

Qu, Xuanhui ^{[1
]}

Zhang, Shengen ^{[1
]}

Cao, Guozhong ^{[2
,3
]}

机构：

[1] Univ Sci & Technol Beijing, Adv Mat & Technol Inst, Beijing 100083, Peoples R China

[2] Univ Washington, Dept Mat Engn, Seattle, WA 98195 USA

[3] Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China

来源：

ENERGY & ENVIRONMENTAL SCIENCE | 2013年 / 6卷 / 12期

基金：

美国国家科学基金会;

关键词：

CONVERSION EFFICIENCY; CDS/CDSE; PERFORMANCE; CDSE; NANOPARTICLES; DEPOSITION; CIRCUIT; LAYER; FILM;

D O I：

10.1039/c3ee41056k

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this work, we reported a facile chemical passivation strategy for a ZnO mesoporous photoelectrode to improve the performance of a CdS/CdSe quantum dot co-sensitized solar cell (QDSC). The QDSC exhibited a record power conversion efficiency of 4.68%.

引用

页码：3542 / 3547

页数：6

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