Emission site control in carbon nanotube field emitters by focused ion beam irradiation

被引：13

作者：

Sawada, A ^{[1
]}

Iriguchi, M ^{[1
]}

Zhao, WJ ^{[1
]}

Ochiai, C ^{[1
]}

Takai, M ^{[1
]}

机构：

[1] Osaka Univ, Res Ctr Mat Sci Extreme Condit, Toyonaka, Osaka 5608531, Japan

来源：

IVMC 2000: PROCEEDINGS OF THE 14TH INTERNATIONAL VACUUM MICROELECTRONICES CONFERENCE | 2001年

关键词：

D O I：

10.1109/IVMC.2001.939637

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Effect of ion irradiation on emission behavior in CNT (carbon nano tube) emitters has been investigated using focused ion beams (FIBs). The improvement in emission behavior with a drastic reduction in turn-on voltage and increase in emission current was found after FIB irradiation in CNT emitters.

引用

页码：29 / 30

页数：2