A layer-wise topographic study of a polymeric light-emitting diode: Indium-tin oxide/poly(2,3-diphenyl-p-phenylene vinylene)/Ag

被引：8

作者：

Razafitrimo, H

Gao, Y

Feld, WA

Hsieh, BR

机构：

[1] WRIGHT STATE UNIV, DEPT CHEM, DAYTON, OH 45435 USA

[2] XEROX CORP, WEBSTER, NY 14580 USA

来源：

SYNTHETIC METALS | 1996年 / 79卷 / 02期

基金：

美国国家科学基金会;

关键词：

diodes; poly(2,3-diphenyl-p-phenylene vinylene); scaling; microscopy;

D O I：

10.1016/0379-6779(96)80176-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Scanning tunneling microscopy was used to characterize surface topographies relevant to polymeric light-emitting diodes (LEDs) whose active medium is a thin film of poly(2,3-diphenyl-p-phenylene vinylene) (DP-PPV). We performed a sequence of topographic studies on an indium-tin oxide (ITO) substrate, a DP-PPV film deposited on the ITO substrate, and a Ag layer of thickness of about 100 Angstrom as evaporated on the DP-PPV film. ITO showed a granular structure, DP-PPV exhibited a fibrous-like bundled structure, and the Ag layer formed clusters whose surface roughness was comparable to the layer thickness. The different surface topographies were quantified by using the scaling of the height-height correlation functions.

引用

页码：103 / 106

页数：4

共 13 条

[1] PHOTOVOLTAIC AND PHOTOCONDUCTIVE PROPERTIES OF ALUMINUM POLY(P-PHENYLENE VINYLENE) INTERFACES [J].