Decoration of buried surfaces in Si detected by positron annihilation spectroscopy -: art. no. 011920

被引：9

作者：

Brusa, RS

Macchi, C

Mariazzi, S

Karwasz, GP

Egger, W

Sperr, P

Kögel, G

机构：

[1] Univ Trent, Dipartimento Fis, I-38050 Trento, Italy

[2] Univ Bundeswehr Munchen, Inst Angew Phys & Messtech, D-85577 Neubiberg, Germany

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 01期

关键词：

D O I：

10.1063/1.2162691

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The terminations of buried surfaces of two different cavity types (nano- and microcavities) produced in the same He+-H+ co-implanted p-type Si (100) sample annealed at 900 degrees C, are studied and characterized by positron annihilation spectroscopy. The characterization was carried out by means of three complementary positron techniques: Doppler broadening and coincidence-Doppler broadening spectroscopy with a continuous slow positron beam, and lifetime spectroscopy with a pulsed slow positron beam. It was found that the nanocavities have a pristine surface of Si, while the surfaces of the microcavities, formed below protruding blisters, are oxygen decorated. This case study opens the interesting use of the positron spectroscopy tool in the topical subject of empty space for microelectronics applications. (c) 2006 American Institute of Physics.

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页数：3

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