Band-structure parameters by genetic algorithm

被引:21
作者
Starrost, F
Bornholdt, S
Solterbeck, C
Schattke, W
机构
[1] Institut für Theoretische Physik, Universität Kiel, D-24118 Kiel
来源
PHYSICAL REVIEW B | 1996年 / 53卷 / 19期
关键词
D O I
10.1103/PhysRevB.53.12549
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A genetic algorithm has been used to solve a complex multidimensional parameter-fitting problem. We will focus on the parameters of an empirical tight-binding Hamiltonian. The method is used to approximate the electronic energy band structure if energy values are known for a few wave vectors of high symmetry. Compared to the usual manual procedure this method is more accurate and automatic. This approach, based on the extended Huckel theory (EHT), has provided a list of EHT parameters for IV-IV and III-V semiconductors with zinc-blende structure and helped us to find a symmetry in the EHT.
引用
收藏
页码:12549 / 12552
页数:4
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