He+ beam induced damage of silicon carbide studied by vibrational spectroscopy

被引：10

作者：

Hobert, H ^{[1
]}

Dunken, H ^{[1
]}

Seifert, E ^{[1
]}

Menzel, R ^{[1
]}

Bachmann, T ^{[1
]}

Wesch, W ^{[1
]}

机构：

[1] UNIV JENA,INST SOLID STATE PHYS,D-07743 JENA,GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1997年 / 129卷 / 02期

关键词：

D O I：

10.1016/S0168-583X(97)00205-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The damaging of 6H-SiC by He+ ions with 700 and 1400 keV and doses between 0.5 and 24 x 10(14) ions cm(-2) was studied by IR and Raman spectroscopy. Optical modelling of the IR spectra indicates the formation of two layers: a light absorbing surface layer of disturbed crystalline material with a thickness of 1.6 and 3.1 mu m, respectively, and an interface layer with a thickness of 0.3 mu m and a dose-proportional increase of the refractive index. Raman spectra show a special kind of lattice distortions and decrease of the sharp bands of the crystalline bulk carbide, which is proportional to the ion dose also and is caused by the diminished transparency of the surface layers.

引用

页码：244 / 249

页数：6

共 6 条

[1] AMORPHIZATION AND RECRYSTALLIZATION OF 6H-SIC BY ION-BEAM IRRADIATION [J].