Electron paramagnetic resonance Knight shift in semimagnetic (diluted magnetic) semiconductors

被引：54

作者：

Story, T ^{[1
]}

Swuste, CHW ^{[1
]}

Eggenkamp, PJT ^{[1
]}

Swagten, HJM ^{[1
]}

deJonge, WJM ^{[1
]}

机构：

[1] EINDHOVEN UNIV TECHNOL, DEPT PHYS, NL-5600 MB EINDHOVEN, NETHERLANDS

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 77卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.77.2802

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The effect of the carrier concentration induced shift of the g factor (the Knight shift) of the Mn2+ magnetic moment in PbTe and SnTe semiconducting matrices is experimentally observed and is of different sign for n- and for p-type crystals. The analysis of this effect allows for a straightforward determination of both the sign and the magnitude of the free carrier-local moment exchange integrals for holes and electrons in PbTe, as well as for light and heavy holes in SnTe.

引用

收藏

页码：2802 / 2805

页数：4

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