Theoretical modeling of thermoelectricity in Bi nanowires

被引：160

作者：

Sun, X ^{[1
]}

Zhang, Z

Dresselhaus, MS

机构：

[1] MIT, Dept Phys, Cambridge, MA 02139 USA

[2] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 26期

关键词：

D O I：

10.1063/1.123242

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A theoretical model based on the basic electronic band structure of bulk Bi is developed to predict the dependence of the band structure and thermoelectric properties on nanowire width. By carefully tailoring the Bi wire size and carrier concentration, substantial enhancement in the thermoelectric figure of merit is expected for small nanowire widths. (C) 1999 American Institute of Physics. [S0003-6951(99)04726-9].

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页码：4005 / 4007

页数：3

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