Monte Carlo simulations of charge transport in high-speed lasers

被引：6

作者：

Crow, GC

Abram, RA

机构：

[1] Department of Physics, University of Durham

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1997年 / 33卷 / 07期

基金：

英国工程与自然科学研究理事会;

关键词：

modeling; Monte Carlo methods; semiconductor lasers;

D O I：

10.1109/3.594883

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A self-consistent ensemble Monte Carlo calculation of carrier transport in multiple-quantum-well lasers has been developed in an effort to understand the impact of picosecond carrier dynamics upon the modulation bandwidth, The model has been applied to InGaAsP-based devices which are designed to emit at 1550 nm, Results are discussed for structures with ungraded confinement layers of varied width and different numbers of QWs, Simulations have been carried out at fixed and also modulated bias, from which the intrinsic frequency response can be derived.

引用

收藏

页码：1190 / 1196

页数：7

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