Low-threshold limitation of IR radiation in impurity semiconductors

被引：4

作者：

Bagrov, IV ^{[1
]}

Zhevlakov, AP ^{[1
]}

Sidorov, AI ^{[1
]}

Mikheeva, OP ^{[1
]}

Sudarikov, VV ^{[1
]}

机构：

[1] Sci Res Inst Laser Phys, St Petersburg, Russia

来源：

JOURNAL OF OPTICAL TECHNOLOGY | 2002年 / 69卷 / 02期

关键词：

D O I：

10.1364/JOT.69.000077

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This paper presents the results of experiments on the limitation of pulsed laser radiation with wavelengths of 1.315 and 1.54 mum and in the spectral interval 3.8-4.2 mum for nano and microsecond pulses in doped gallium arsenide and zinc selenide. It shows that the self-defocusing effect of near-IR radiation under the conditions of impurity absorption makes it possible to obtain an energy limitation threshold of 2-20 pJ, with an attenuation coefficient greater than 1000. (C) 2002 Optical Society of America.

引用

页码：77 / 81

页数：5

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