Thickness dependence of tunneling magneto-resistance effect in granular Fe-Al2O3 films

被引:20
作者
Huang, YH
Hsu, JH
Chen, JW
机构
[1] Dept. of Physics, National Taiwan University, Taipei
关键词
D O I
10.1109/20.619496
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The magneto-transport properties of the granular Fe-0.5(Al2O3)(0.5) solids with various film thickness have been investigated, The temperature dependence of the resistivity shows that all samples follow a tunneling type equation p(T) = p(0)exp(T-o/T)(1/alpha) with p approximate to 0.1 similar to 1 Omega cm at 300K and alpha = 2. The results of magneto-resistance at 300K indicate that the value is about 4.5% for thick films. If increases slowly with decreasing Trim thickness. At about 150nm, a peak value of TMR is found, which is determined to be 5%. Then TMR drops sharply with further reducing film thickness. It becomes only 3% at t = 20nm. At low temperatures, the TMR effect becomes larger and shows similar thickness dependence. However, the values of T-o that relate to the geometry of the tunneling barrier show behavior of opposite thickness dependence. A small T-o is associated with a large TMR effect. In this report, the correlation of the film microstructure and the TMR effect are discussed in details.
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页码:3556 / 3558
页数:3
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