Formation of compensated defects in zinc magnesium oxides assignable from diffusion coefficients and hard x-ray photoemission

被引：10

作者：

Ohsawa, Takeo ^{[1
]}

Sakaguchi, Isao ^{[1
]}

Ohashi, Naoki ^{[1
]}

Haneda, Hajime ^{[1
]}

Ryoken, Haruki ^{[1
]}

Matsumoto, Kenji ^{[1
]}

Hishita, Shunichi ^{[1
]}

Adachi, Yutaka ^{[1
]}

Ueda, Shigenori ^{[2
]}

Yoshikawa, Hideki ^{[2
]}

Kobayashi, Keisuke ^{[2
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

[2] Natl Inst Mat Sci, NIMS Beamline Stn SPring 8, Sayo, Hyogo 6795148, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 04期

关键词：

diffusion; electrical conductivity; magnetic semiconductors; semiconductor thin films; solubility; X-ray photoelectron spectra; zinc compounds; PULSED-LASER DEPOSITION; THIN-FILMS; ZNO; SPECTROSCOPY; SINGLE; OXYGEN;

D O I：

10.1063/1.3075578

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied metastable (Zn1-xMgx)O alloy films having a high MgO fraction, e.g., x=0.47, in excess of its solubility limit (x approximate to 0.15). Residual electron concentrations in the metastable films were close to those of the stable films having a smaller MgO fraction (x=0.07). In contrast to the electric conductivity, diffusivities of both cation and anion in the metastable films were surprisingly higher than those in the stable films, indicating that a high concentration of compensated defects were generated in the metastable alloy with a high MgO fraction. Photoemission spectroscopy confirmed the presence of ionized acceptors for charge compensation in the metastable (Zn1-xMgx)O.

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页数：3

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