Photoelectrochemical cells based on chemically deposited nanocrystalline Bi2S3 thin films

被引：83

作者：

Mane, RS ^{[1
]}

Sankapal, BR ^{[1
]}

Lokhande, CD ^{[1
]}

机构：

[1] Shivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, Maharashtra, India

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1999年 / 60卷 / 02期

关键词：

chemical deposition; nanocrystalline Bi2S3 thin films; photoelectrochemical cells;

D O I：

10.1016/S0254-0584(99)00085-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nanocrystalline bismuth sulphide (Bi2S3) thin films of various thicknesses having grain size between 7 and 34 nm have been prepared by using chemical bath deposition method onto fluorine doped tin oxide (FTO) coated glass substrates (sheet resistance 20-30 Ohm cm(2)) from an aqueous acidic bath (pH = 5). Bismuth nitrate: and thioacetamide were used as Bi3+ and S2- ion sources, respectively. Films were prepared at the bath temperature of 6 degrees C. The Bi2S3/polysulphide junction cells were fabricated and their photoelectrochemical performance was studied. The grain size and thickness of Bi2S3 films were found to cause significant changes in the photoelectrochemical cell performance. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：196 / 203

页数：8

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