Acceptor doping in ZnO with group-I elements

被引：25

作者：

Sann, J ^{[1
]}

Hofstaetter, A ^{[1
]}

Pfisterer, D ^{[1
]}

Stehr, J ^{[1
]}

Meyer, BK ^{[1
]}

机构：

[1] Univ Giessen, Inst Phys 1, Heinrich Buff Ring 16, D-35392 Giessen, Germany

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 4 | 2006年 / 3卷 / 04期

关键词：

D O I：

10.1002/pssc.200564635

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We study the interaction of hydrogen donors and Lithium acceptors in bulk ZnO by electron paramagnetic resonance and photoluminescence. With increasing diffusion temperature the number of hydrogen donors increases whereas the number of deep Li acceptors decreases. In the temperature range between 450 and 600 degrees C a shallow Li related acceptor is formed. The very same defect is found in Li diffused ZnO, and in epitaxial ZnO thin films by in-situ doping with Li. We suggest a tentative model for the shallow Li acceptor whereby hydrogen would be an essential part of the defect core. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：952 / +

页数：2

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