Characterization of high dose Fe implantation into p-GaN

被引：53

作者：

Theodoropoulou, N ^{[1
]}

Hebard, AF

Chu, SNG

Overberg, ME

Abernathy, CR

Pearton, SJ

Wilson, RG

Zavada, JM

机构：

[1] Univ Florida, Dept Phys, Gainesville, FL 32611 USA

[2] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA

[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[4] USA, Res Off, Res Triangle Pk, NC 27709 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 21期

关键词：

D O I：

10.1063/1.1420406

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High concentrations (3-5 at. %) of Fe were incorporated into p-GaN by direct implantation at elevated substrate temperature (350 degreesC). Subsequent annealing at 700 degreesC produced apparent ferromagnetic behavior up to similar to 250 K for the 3 at. % sample. Selected area diffraction patterns did not reveal the presence of any other phases in the Fe-implanted region. The direct implantation process appears promising for examining the properties of magnetic semiconductors with application to magnetotransport and magneto-optical devices. (C) 2001 American Institute of Physics.

引用

页码：3452 / 3454

页数：3

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