Diameter-independent kinetics in the vapor-liquid-solid growth of Si nanowires

被引：228

作者：

Kodambaka, S ^{[1
]}

Tersoff, J ^{[1
]}

Reuter, MC ^{[1
]}

Ross, FM ^{[1
]}

机构：

[1] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

PHYSICAL REVIEW LETTERS | 2006年 / 96卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.96.096105

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We examine individual Si nanowires grown by the vapor-liquid-solid mechanism, using real-time in situ ultra high vacuum transmission electron microscopy. By directly observing Au-catalyzed growth of Si wires from disilane, we show that the growth rate is independent of wire diameter, contrary to the expected behavior. Our measurements show that the unique rate-limiting step here is the irreversible, kinetically limited, dissociative adsorption of disilane directly on the catalyst surface. We also identify a novel dependence of growth rate on wire taper.

引用

页码：1 / 4

页数：4

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