Switching property of sol-gel vanadium oxide thin films

被引：21

作者：

Yuan, NY ^{[1
]}

Li, JH

Lin, CL

机构：

[1] Jiangsu Inst Petrochem Technol, Lab Funct Mat, Dept Informat Sci, Changzhou 213016, Peoples R China

[2] Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Met, Shanghai 200050, Peoples R China

来源：

ACTA PHYSICA SINICA | 2002年 / 51卷 / 04期

关键词：

sol-gel method; thin films of vanadium oxides; switching property of VO2 thin film;

D O I：

10.7498/aps.51.852

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

V2O5 thin films with preferred orientation were prepared by the sol-gel method on SiO2/Si substrate. When baked at temperatures higher than 400degreesC and pressures lower than 2Pa, the V2O5 thin film can be converted to a VO2 thin film with property of resistance change larger than 3 orders, and a 6.2degreesC in hysteresis width. Meanwhile the transition process from V2O5 to VO2 Was discussed in detail. It was confirmed that the key factors to obtain a VO2 thin film with a good switching property were the conditions of pre-heating and vacuum baking of the V2O5 thin film.

引用

页码：852 / 856

页数：5

共 10 条

[1] Novel wet process for preparation of vanadium oxide thin film [J].