Alternative gate dielectrics for microelectronics

被引：161

作者：

Wallace, RM

Wilk, G ^{[1
]}

机构：

[1] Univ N Texas, New Lab Elect Mat & Devices, Denton, TX 76203 USA

[2] Texas Instruments Inc, Cent Res Labs, Dallas, TX 75265 USA

来源：

MRS BULLETIN | 2002年 / 27卷 / 03期

关键词：

high-dielectric-constant materials; high-kappa dielectrics; integration; materials characterization; process compatibility; thermal stability;

D O I：

10.1557/mrs2002.70

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This brief article sets the context for the March 2002 issue of MRS Bulletin focusing on Alternative Gate Dielectrics for Microelectronics. Contributors are several experts from industry and academia engaged in the search for manufacturable solutions for a suitable alternative gate dielectric to SiO2 using high-dielectric-constant (high-kappa) materials. Issues discussed in the articles include thermodynamics criteria for materials selection, materials interactions in the construction of the transistor gate stack, characterization of alternative materials, determination of suitable band offsets for candidate dielectrics, and integration of these alternative gate dielectrics in a manufacturable environment.

引用

页码：186 / 187

页数：2