Domain wall scattering explains 300 % ballistic magnetoconductance of nanocontacts

被引：177

作者：

Tatara, G

Zhao, YW

Muñoz, M

García, N

机构：

[1] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Germany

[2] Osaka Univ, Grad Sch Sci, Osaka 5600043, Japan

[3] CSIC, Lab Fis Sistemas Pequenos & Nanotecnol, E-28006 Madrid, Spain

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 83卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.83.2030

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present theory and experiments in good agreement for ballistic magnetoresistance in nanoscopic-size contacts in 3d metals (Ni and Co). It is found that values of the ballistic magnetoconductance of similar to 300% at room temperature can be explained by scattering by the domain wall which is trapped in the constriction region. These values are obtained for very small contacts and they decrease very fast as the contact size increases. The theory also explains this behavior.

引用

页码：2030 / 2033

页数：4

共 31 条

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