Lead-orientation-dependent wave function scarring in open quantum dots

被引：124

作者：

Bird, JP ^{[1
]}

Akis, R

Ferry, DK

Vasileska, D

Cooper, J

Aoyagi, Y

Sugano, T

机构：

[1] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

[2] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[3] RIKEN, Frontier Res Program, Nanoelect Mat Lab, Wako, Saitama 35101, Japan

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 82卷 / 23期

关键词：

D O I：

10.1103/PhysRevLett.82.4691

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Experimental studies of the conductance of open quantum dots show a series of highly regular oscillations at low temperatures as the voltage applied to their defining gates is varied. Simulations of quantum transport through these dots reveal the oscillations to be correlated to the recurrence of specific groups of wave function scars. We furthermore find that nominally identical dots, differing only in the orientation of their input and output contacts, may be used to excite different families of scars, giving rise in turn to measurable transport results. [S0031-9007(99)09319-9].

引用

页码：4691 / 4694

页数：4

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