Core-level broadening mechanisms at silicon surfaces

被引：11

作者：

Grupp, C ^{[1
]}

Taleb-Ibrahimi, A ^{[1
]}

机构：

[1] Ctr Univ Paris Sud, Utilisat Rayonnement Electromagnet Lab, F-91405 Orsay, France

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1999年 / 101卷

关键词：

D O I：

10.1016/S0368-2048(98)00492-7

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

This article deals with the different mechanisms responsible for core-level broadening as observed by high-resolution photoelectron spectroscopy. Based on a comparative study for three different Si(lll) surfaces the fundamental questions of symmetric or asymmetric broadening and scattered electron background are discussed together with the relative contribution of Lorentzian and Gaussian widths to the final core-level broadening. The variation of core-level broadening with temperature is studied at very low temperatures T similar to 30-300 K in order to evaluate the contribution of phonon broadening for the silicon bulk and the surface components. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：309 / 313

页数：5

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