Dielectric dispersion of lead hafnate crystals in the low frequency regime

被引:5
作者
Miga, S
Dec, J
机构
[1] Institute of Physics, University of Silesia, PL-40-007 Katowice
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1996年 / 153卷 / 01期
关键词
D O I
10.1002/pssa.2211530126
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The low frequency dispersion (for f = 5 to 1000 Hz) of the dielectric permittivity on PbHfO3 crystals is investigated. Data analysis is based on the two-layer capacitor model. For the paraelectric phase, the following values of surface layer parameters are obtained: permittivity epsilon = 4 to 15, conductivity 5.6 x 10(-8) to 2.2 x 10(-6) Omega(-1) m(-1). The bulk dielectric permittivity of the crystal changes from 2850 at 210 degrees C to 2100 at 250 degrees C.
引用
收藏
页码:257 / 264
页数:8
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