High quality wide gap hydrogenated amorphous silicon has been prepared using the chemical annealing technique. It was possible to prepare materials with band gaps ranging 1.8 to 2.1 eV by varying the preparation parameters. Low defect densities less than (3-8) x 10(15) cm(-3) could be maintained over the entire band gap range. Improved stability for Light soaking was also observed in the wide gap materials.