Wide-gap a-Si:H fabricated by controlling voids

被引:9
作者
Yoshino, K
Futako, W
Wasai, Y
Shimizu, I
机构
来源
AMORPHOUS SILICON TECHNOLOGY - 1996 | 1996年 / 420卷
关键词
D O I
10.1557/PROC-420-335
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High quality wide gap hydrogenated amorphous silicon has been prepared using the chemical annealing technique. It was possible to prepare materials with band gaps ranging 1.8 to 2.1 eV by varying the preparation parameters. Low defect densities less than (3-8) x 10(15) cm(-3) could be maintained over the entire band gap range. Improved stability for Light soaking was also observed in the wide gap materials.
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页码:335 / 340
页数:6
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