Quantification of low levels of fluorine content in thin films

被引:11
作者
Ferrer, F. J. [1 ]
Gil-Rostra, J. [2 ]
Terriza, A. [2 ]
Rey, G. [3 ]
Jimenez, C. [3 ]
Garcia-Lopez, J. [1 ]
Yubero, F. [2 ]
机构
[1] Univ Seville, CSIC, Ctr Nacl Aceleradores, Av Thomas A Edison 7, E-41092 Seville, Spain
[2] Univ Seville, CSIC, Inst Ciencia Mat, E-41092 Seville, Spain
[3] INPGrenoble Minatec 3, Lab Mat & Genie Phys, UMR 5628, F-38016 Grenoble 1, France
关键词
Fluorine content; Rutherford Backscattering Spectrometry; Particle induced gamma-ray emission; Fluorine-doped tin oxides; Fluorinated silica films; Fluorinated carbon films; CHEMICAL-VAPOR-DEPOSITION; SCATTERING CROSS-SECTION; SIOF FILMS; NUCLEAR-REACTIONS; CARBON; TRANSPARENT; TEMPERATURE;
D O I
10.1016/j.nimb.2011.11.042
中图分类号
TH7 [仪器、仪表];
学科分类号
080401 [精密仪器及机械];
摘要
Fluorine quantification in thin film samples containing different amounts of fluorine atoms was accomplished by combining proton-Rutherford Backscattering Spectrometry (p-RBS) and proton induced gamma-ray emission (PIGE) using proton beams of 1550 and 2330 keV for p-RBS and PIGE measurements, respectively. The capabilities of the proposed quantification method are illustrated with examples of the analysis of a series of samples of fluorine-doped tin oxides, fluorinated silica, and fluorinated diamond-like carbon films. It is shown that this procedure allows the quantification of F contents as low as 1 at.% in thin films with thicknesses in the 100-400 nm range. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:65 / 69
页数:5
相关论文
共 37 条
[1]
ENERGY-LEVELS OF LIGHT-NUCLEI A=18-20 [J].
AJZENBERGSELOVE, F .
NUCLEAR PHYSICS A, 1987, 475 (01) :1-198
[2]
Fluorine content of SiOF films as determined by IR spectroscopy and resonant nuclear reaction analysis [J].
Alonso, J. C. ;
Diaz-Bucio, M. ;
Ortiz, A. ;
Benami, A. ;
Cheang-Wong, J. C. ;
Rodriguez-Fernandez, L. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2007, 25 (03) :448-454
[3]
[Anonymous], ION BEAM SURFACE LAY
[4]
Properties of fluorinated silica glass deposited at low temperature by atmospheric plasma-enhanced chemical vapor deposition [J].
Barankin, Michael D. ;
Williams, Thomas S. ;
Gonzalez, Eleazar, II ;
Hicks, Robert F. .
THIN SOLID FILMS, 2010, 519 (04) :1307-1313
[5]
Deposition of stable, low κ and high deposition rate SiF4-doped TEOS fluorinated silicon dioxide (SiOF) films [J].
Bhan, MK ;
Huang, J ;
Cheung, D .
THIN SOLID FILMS, 1997, 308 :507-511
[6]
THE ELASTIC SCATTERING OF PROTONS BY LIGHT ELEMENTS [J].
DEARNALEY, G .
PHILOSOPHICAL MAGAZINE, 1956, 1 (09) :821-834
[7]
Demortier G., 1983, 724 LARN, V724
[8]
CNA:: The first accelerator-based IBA facility in Spain [J].
García-López, J ;
Ager, FJ ;
Rank, MB ;
Madrigal, FJ ;
Ontalba, MA ;
Respaldiza, MA ;
Ynsa, MD .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 161 :1137-1142
[9]
Float line deposited transparent conductors - Implications for the PV industry [J].
Gerhardinger, PF ;
Mccurdy, RJ .
THIN FILMS FOR PHOTOVOLTAIC AND RELATED DEVICE APPLICATIONS, 1996, 426 :399-410
[10]
Gil-Rostra J., UNPUB