Pulsed laser operation of diffusion-doped Cr2+:ZnSe

被引：28

作者：

Podlipensky, AV

Shcherbitsky, VG

Kuleshov, NV

Mikhailov, VP

Levchenko, VI

Yakimovich, VN

Postnova, LI

Konstantinov, VI

机构：

[1] Belarus State Politech Acad, Ctr Int Laser, Minsk 220027, BELARUS

[2] NASB, Inst Solid State Phys & Semicond, Minsk 220072, BELARUS

来源：

OPTICS COMMUNICATIONS | 1999年 / 167卷 / 1-6期

关键词：

D O I：

10.1016/S0030-4018(99)00289-8

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The laser properties of Cr2+:ZnSe crystals obtained by diffusion doping method was investigated under pumping by the 1.6 mu m output of a Nd:YAG laser-pumped Ba(NO3)(2) Raman laser. A slope efficiency of 45%, a laser threshold of 12 mu J and round-trip passive losses of around 9% were measured for the best samples. (C) 1999 Elsevier Science B.V. All rights reserved.

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页码：129 / 132

页数：4

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