Growth morphology of epitaxial Fe films on annealed MgO (001) surfaces

被引：10

作者：

Subagyo, A

Sueoka, K

Mukasa, K

机构：

[1] Hokkaido Univ, Grad Sch Engn, Kita Ku, Sapporo, Hokkaido 0608628, Japan

[2] Japan Sci & Technol Corp, JST, PRESTO, Kita Ku, Sapporo, Hokkaido 0608628, Japan

[3] Japan Sci & Technol Corp, JST, CREST, Kita Ku, Sapporo, Hokkaido 0608628, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1999年 / 35卷 / 05期

关键词：

substrate annealing; bcc-Fe(001); MgO(001); epitaxial growth; segregated impurities;

D O I：

10.1109/20.801077

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of substrate annealing on the growth morphology of bcc-Fe(001) films epitaxially grown on MgO (001) surfaces have been investigated. Substrate annealing at 1000 degrees C for 30 minutes produced step-terrace surfaces which are the basis of flat and square Fe islands. By increasing the annealing time, the step profiles are improved to form long straight steps. Longer annealing time caused an increase of segregated impurities regions and a reconstruction of the MgO surface. The presence of the segregated impurities and the reconstructed MgO surface negate the annealing effects, i.e. it reduces the step edge growth that enhances the formation of round islands, degrades the uniformity of Fe island size and increases the rms roughness of Fe films.

引用

收藏

页码：3037 / 3039

页数：3

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