Transistor-Limited Constant Voltage stress of gate dielectrics

被引：24

作者：

Linder, BP ^{[1
]}

Frank, DJ ^{[1
]}

Stathis, JH ^{[1
]}

Cohen, SA ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Res Div, Yorktown Hts, NY 10598 USA

来源：

2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2001年

关键词：

D O I：

10.1109/VLSIT.2001.934965

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Conventional methodology gauges gate oxide reliability by stressing with a low impedance voltage source. This is more severe than the stress sustained during circuit operation in which transistors are driven by other transistors. A new test configuration which better approximates circuit stress conditions, the Transistor-Limited Constant Voltage stress, significantly reduces post-breakdown conduction (I-BD) as compared to standard Constant Voltage Stress. The smaller the current drive capability of the limiting transistor, the softer the breakdown. If I-BD of the broken dielectric is sufficiently reduced while the voltage margin of the circuit is not exceeded, circuits may continue to function even with a failed oxide.

引用

页码：93 / 94

页数：2