Ferroelectric DRAM (FEDRAM) FET with metal/SrBi2Ta2O9/SiN/Si gate structure

被引：70

作者：

Kim, KH ^{[1
]}

Han, JP

Jung, SW

Ma, TP

机构：

[1] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA

[2] Cheongju Univ, Dept Semicond Engn, Chungbuk 360764, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 02期

关键词：

ferroelectric dynamic random access memory; (FEDRAM) FET; retention; SiN buffer; SrBi2Ta2O9; switching;

D O I：

10.1109/55.981313

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

N-channel ferroelectric dynamic random access memory (FEDRAM) FETs with SrBi2Ta2O9/SiN/Si structure were fabricated and characterized. The estimated switching time (t(sw)) of the fabricated FET, measured at applied electric field of 376 kV/cm, was less than 50 ns, which could be significantly reduced upon scaling. Its remnant polarization (2P(r)) was measured to be about 1.5 muC/cm(2), which is more than one order of magnitude higher than that required for FEDRAM operation. The stored information retains more than three orders of magnitude of on/off ratio up to three days at room temperature, with little fatigue after 10(11) switching cycles.

引用

页码：82 / 84

页数：3

共 15 条

[1] Scaling of ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films [J].