Grain boundary impedance of doped Mn-Zn ferrites

被引：39

作者：

Arcos, D

Vázquez, M

Valenzuela, R

Vallet-Regí, M

机构：

[1] UCM, Inst Appl Magnetism, RENFE, Madrid 28230, Spain

[2] CSIC, Inst Mat Sci, Madrid 28230, Spain

[3] Natl Autonomous Univ Mexico, Mat Res Inst, Mexico City 04510, DF, Mexico

[4] Univ Complutense Madrid, Fac Farm, Dept Inorgan & Bioinorgan Chem, E-28040 Madrid, Spain

来源：

JOURNAL OF MATERIALS RESEARCH | 1999年 / 14卷 / 03期

关键词：

This work was partially supported by CICYT-Spain; Research Project MAT 96-0919; the European Commission through the St. Andrews Materials ALFA Network; and DGAPA-UNAM; Mexico; Grant No. IN 100996. The authors thank J. Guzmán for technical assistance in SEM;

D O I：

10.1557/JMR.1999.0115

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical properties of Mn-Zn ferrites undoped and doped with Nb2O5 and V2O5 were investigated by impedance spectroscopy. The observed impedance response corresponded to that of a highly resistive grain boundary component in series with a less resistive bulk component. The presence of Nb5+ and V5+ led to an enhancement in the electrical resistance, especially in grain boundaries, as well as a greater difference in the electrical behavior between bulk and grain boundary components. The different dopant performance of these two components is discussed on the basis of grain boundary structure and chemical data, electrical conductivity, and dielectric dispersion.

引用

页码：861 / 865

页数：5

共 10 条

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