Preparation of TiO2 thin film by liquid sprayed mist CVD method

被引：76

作者：

Kim, BH ^{[1
]}

Lee, JY

Choa, YH

Higuchi, M

Mizutani, N

机构：

[1] Chonbuk Natl Univ, Res Inst Adv Mat Dev, Div New Mat Engn, Chonbuk 561756, South Korea

[2] Hanyang Univ, Dept Mat Technol, Ansan 425791, Kyungi Do, South Korea

[3] Tokyo Inst Technol, Dept Inorgan Mat, Tokyo 152, Japan

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 107卷 / 03期

关键词：

synthesis of TiO2 thin film; ultrasonic atomizer; liquid sprayed mist CVD; 1; atmosphere;

D O I：

10.1016/j.mseb.2003.12.010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Titanium dioxide (TiO2) thin film was synthesized on alpha-Al2O3 (0 0 0 1) substrate by liquid sprayed mist chemical vapor deposition under 1 atm. Tetraethylorthotitanate [TEOT, (C2H5O)(4)Ti] was used as starting material. The liquid source to synthesize TiO2 thin film was prepared from dissolving the starting materials in 2-methoxyethanol. The TiO2 thin film was obtained as the amorphous phase at 300 degreesC and crystalline anatase type TiO2 above 400 degreesC. The crystal of thin film was mainly oriented to (112) plane. The degree of (112) orientation, the thickness, and the surface roughness of the film were strongly dependent on the substrate temperature and deposition time. By the controlling the substrate temperature and deposition time, TiO2/alpha-Al2O3 (0 0 0 1) films with preferred orientation were successfully fabricated, and the film deposition rate was about 10 nm/min. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：289 / 294

页数：6

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