AlN on sapphire and on SiC: CL and Raman study

被引：20

作者：

Kornitzer, K

Limmer, W

Thonke, K ^{[1
]}

Sauer, R

Ebling, DG

Steinke, L

Benz, KW

机构：

[1] Univ Ulm, Abt Halbleiterphys, D-89069 Ulm, Germany

[2] Univ Freiburg, Freiburger Mat Forschungszentrum, D-79104 Freiburg, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

关键词：

AlN; cathodoluminescence; band-gap energies; Raman scattering; phonon energies;

D O I：

10.1016/S0022-0248(98)01371-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Aluminium nitride (AIN) layers were grown on sapphire (0001) and on Si-terminated SIC (0001) in a RF-plasma enhanced MBE system with integrated UHV-STM/AFM. The layers have been investigated by cathodoluminescence (CL) and Raman measurements. The CL measurements show defect related transitions in the region of 2-5 eV and resolved excitonic features in the near band-edge region followed by multiple A,(LO) replica. From both CL and Raman studies a superior quality of the AlN/SiC layers in comparison to the AlN/sapphire layers is deduced. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：441 / 443

页数：3

共 8 条

[1] Amphoteric properties of substitutional carbon impurity in GaN and AlN [J].