Computer modelling of current matching in a-Si:H/a-Si:H tandem solar cells on textured TCO substrates

被引:87
作者
Zeman, M
Willemen, JA
Vosteen, LLA
Tao, G
Metselaar, JW
机构
[1] Dept. Electron. Components, T., Delft Univ. of Technology - DIMES, 2600 GB Delft
关键词
computer modelling; current matching; tunnel/recombination junction;
D O I
10.1016/S0927-0248(96)00094-3
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Computer modelling is used as a tool for optimising a-Si:H/a-Si:H tandem cells on textured substrate in order to achieve current matching between the top and bottom cell. To take light scattering at the textured interfaces of the cell into account, we developed a multi-rough-interface optical model which was used for calculating the absorption profiles in the tandem cells. In order to simulate multi-junction solar cell as a complete device we implemented a novel model for tunnel/recombination junction (TRJ), which combines the trap-assisted tunnelling and enhanced carrier transport in the high-held region of the TRJ. We investigated the influence of light scattering and thickness of the intrinsic layer of the bottom cell on the optimal ratio i2/i1 between the thicknesses of the bottom (i2) and top (ii) intrinsic layers in the current-matched cell. The simulation results show that increasing amount of scattering at the textured interfaces leads to a lower ratio i2/i1 in the current-matched cell. This ratio depends on the thickness of the intrinsic layer of the bottom cell. The simulation results demonstrate that a-Si:H/a-Si:H tandem cell With 300 nm thick intrinsic layer in the bottom cell exhibits higher efficiency than the cell with 500 nm thick bottom intrinsic layer.
引用
收藏
页码:81 / 99
页数:19
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