Lifetime of Wannier-Stark states

被引：34

作者：

Gluck, M ^{[1
]}

Kolovsky, AR ^{[1
]}

Korsch, HJ ^{[1
]}

机构：

[1] Univ Kaiserslautern, Fachbereich Phys, D-67653 Kaiserslautern, Germany

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 83卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.83.891

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The lifetime of a Bloch particle in a homogeneous field is calculated numerically as a function of the field amplitude. A simple model explaining the characteristic features of the field dependence of the lifetime is introduced. The theoretical results are compared with the experimental data of C.F. Bharucha et al. [Phys. Rev. A 55, R857 (1997)] obtained for cold sodium atoms in an accelerated optical lattice.

引用

页码：891 / 894

页数：4

共 17 条

[1] THE LIFETIME OF WANNIER LADDER STATES [J].

AVRON, JE .

ANNALS OF PHYSICS, 1982, 143 (01) :33-53

[2] Observation of atomic tunneling from an accelerating optical potential [J].

Bharucha, CF ;

Madison, KW ;

Morrow, PR ;

Wilkinson, SR ;

Sundaram, B ;

Raizen, MG .

PHYSICAL REVIEW A, 1997, 55 (02) :R857-R860

[3]

BURSTEIN E, 1969, INTERBAND TUNNELING

[4] Calculation of Wannier-Bloch and Wannier-Stark states [J].

Glück, M ;

Kolovsky, AR ;

Korsch, HJ ;

Moiseyev, N .

EUROPEAN PHYSICAL JOURNAL D, 1998, 4 (03) :239-246

[5] Bloch particle in the presence of dc and ac fields:: Statistics of the Wigner delay time [J].

Glück, M ;

Kolovsky, AR ;

Korsch, HJ .

PHYSICAL REVIEW LETTERS, 1999, 82 (07) :1534-1537

[6] Chaotic Wannier-Bloch resonance states [J].

Gluck, M ;

Kolovsky, AR ;

Korsch, HJ .

PHYSICAL REVIEW E, 1998, 58 (05) :6835-6838

[7]

GLUCK M, UNPUB RESONANT TUNNE

[8] Metastable bloch oscillators [J].

Grecchi, V ;

Sacchetti, A .

PHYSICAL REVIEW LETTERS, 1997, 78 (23) :4474-4477

[9] MULTIBAND THEORY OF BLOCH ELECTRON DYNAMICS IN A HOMOGENEOUS ELECTRIC-FIELD [J].

HE, J ;

IAFRATE, GJ .

PHYSICAL REVIEW B, 1994, 50 (11) :7553-7566

[10] Interband optical investigation of Bloch oscillations in semiconductor superlattices [J].

Leo, K .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (03) :249-263

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