Effects of metal electrodes on the resistive memory switching property of NiO thin films

被引：176

作者：

Lee, C. B. ^{[1
]}

Kang, B. S. ^{[1
]}

Benayad, A. ^{[1
]}

Lee, M. J. ^{[1
]}

Ahn, S. -E. ^{[1
]}

Kim, K. H. ^{[1
]}

Stefanovich, G. ^{[1
]}

Park, Y. ^{[1
]}

Yoo, I. K. ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Gyeonggi Do 446712, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 04期

关键词：

D O I：

10.1063/1.2967194

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of various metal electrodes on the resistive switching of NiO thin films were investigated. Contrary to the belief that Pt is used for its high work function, which enables Ohmic contact to p-type NiO, resistive switching was observed in films with Ta or Al electrodes with a low work function in the as-deposited state. The resistive switching of films with a Ag or Cu top electrode with a low work function and high free energy of oxidation shows the importance of the formation of an oxide layer at the metal/NiO interface. (C) 2008 American Institute of Physics.

引用

页数：3

共 12 条

[1] Random circuit breaker network model for unipolar resistance switching
Chae, Seung Chul
Lee, Jae Sung
Kim, Sejin
Lee, Shin Buhm
Chang, Seo Hyoung
Liu, Chunli
Kahng, Byungnam
Shin, Hyunjung
Kim, Dong-Wook
Jung, Chang Uk
Seo, Sunae
Lee, Myoung-Jae
Noh, Tae Won
[J]. ADVANCED MATERIALS, 2008, 20 (06) : 1154 - +
[2] Decrease in switching voltage fluctuation of Pt/NiOx/Pt structure by process control
Jung, Ranju
Lee, Myoung-Jae
Seo, Sunae
Kim, Dong Chirl
Park, Gyeong-Su
Kim, Kihong
Ahn, Seungeon
Park, Youngsoo
Yoo, In-Kyeong
Kim, Jin-Soo
Park, Bae Ho
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (02)
[3] Improvement of resistive memory switching in NiO using IrO2
Kim, D. C.
Lee, M. J.
Ahn, S. E.
Seo, S.
Park, J. C.
Yoo, I. K.
Baek, I. G.
Kim, H. J.
Yim, E. K.
Lee, J. E.
Park, S. O.
Kim, H. S.
Chung, U-In
Moon, J. T.
Ryu, B. I.
[J]. APPLIED PHYSICS LETTERS, 2006, 88 (23)
[4] Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films
Kim, Kyung Min
Choi, Byung Joon
Shin, Yong Cheol
Choi, Seol
Hwang, Cheol Seong
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (01)
[5] Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide
Kinoshita, K.
Tamura, T.
Aoki, M.
Sugiyama, Y.
Tanaka, H.
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (10)
[6] LEE HG, 1999, THERMODYNAMICS METAL, P127
[7] A low-temperature-grown oxide diode as a new switch element for high-density, nonvolatile memories
Lee, Myoung-Jae
Seo, Sunae
Kim, Dong-Chirl
Ahn, Seung-Eon
Seo, David H.
Yoo, In-Kyeong
Baek, In-Gyu
Kim, Dong-Sik
Byun, Ik-Su
Kim, Soo-Hong
Hwang, In-Rok
Kim, Jin-Soo
Jeon, Sang-Ho
Park, Bae Ho
[J]. ADVANCED MATERIALS, 2007, 19 (01) : 73 - +
[8] Resistive memory switching in epitaxially grown NiO
Lee, S. R.
Char, K.
Kim, D. C.
Jung, R.
Seo, S.
Li, X. S.
Park, G. -S.
Yoo, I. K.
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (20)
[9] LIDE DR, 2003, HDB CHEM PHYS, V12, P108
[10] SAMSONOV GV, 1982, OXIDE HDB, P44

← 1 2 →