Electron microscopy study of SiC obtained by the carbonization of Si(111)

被引：11

作者：

Pacheco, FJ

Sánchez, AM

Molina, SI

Araújo, D

Devrajan, J

Steckl, AJ

García, R

机构：

[1] Univ Cadiz, Dept Ciencia Mat & IM & QI, E-11510 Puerto Real, Cadiz, Spain

[2] Univ Cincinnati, Dept Elect & Comp Engn, Cincinnati, OH 45221 USA

[3] Univ Cincinnati, Dept Comp Sci, Cincinnati, OH 45221 USA

来源：

THIN SOLID FILMS | 1999年 / 343卷

关键词：

electron microscopy; silicon carbide; Si(111);

D O I：

10.1016/S0040-6090(98)01589-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A SiC thin film grown by propane carbonization of a Si(lll) substrate has been characterized by transmission electron microscopy and scanning electron microscopy techniques. This study reveals the presence of planar defects in the SiC layer and voids in the Si(111) substrate as well as misfit dislocations at the SiC/Si interface. The resulting SiC layer consists of a mosaic structure and is shown to have low stress. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：305 / 308

页数：4

共 4 条

[1] STRUCTURAL CHARACTERIZATION OF NANOMETER SIC FILMS GROWN ON SI [J].