Reduction of charge build-up with high-power pulsed electron cyclotron resonance plasma

被引：12

作者：

Maruyama, T

Fujiwara, N

Ogino, S

Yoneda, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 4B期

关键词：

plasma etching; microwave plasma; electron cyclotron resonance; pulse modulation; chlorine; sheath potential; local side etch; notch;

D O I：

10.1143/JJAP.36.2526

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Local side etch is one of the most significant problems in high-density plasma and low energy processing. In this paper, we report a detailed analysis of etching characteristics under various modulations and microwave conditions to achieve simultaneously no local side etch, a high etch rate and a high selectivity. In addition, we discuss the mechanism of the reduction of local side etch using a new method to estimate charge build-up.

引用

页码：2526 / 2532

页数：7

共 11 条

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