Ultra thin gate oxide reliability enhanced by carbon contamination free process

被引：14

作者：

Iwamoto, T ^{[1
]}

Ohmi, T ^{[1
]}

机构：

[1] TOHOKU UNIV,ELECT COMMUN RES INST,LAB ELECT INTELLIGENT SYST,SUPER CLEAN ROOM,AOBA KU,SENDAI,MIYAGI 98077,JAPAN

来源：

APPLIED SURFACE SCIENCE | 1997年 / 117卷

关键词：

closed system; opened system; carbon contamination; ultrathin gate oxide reliability; polysilicon/SiO2; interface;

D O I：

10.1016/S0169-4332(97)80086-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this paper, we have demonstrated that carbon contamination caused by a wafer exposure to clean room air induces the degradation of a gate oxide reliability, and we have improved a gate oxide reliability by using a closed system, where the oxidation is followed by an in-situ phosphorus doped polycrystalline Si (poly-Si) gate formation in the same furnace. Furthermore, in opened system, we have demonstrated the removal of the carbon contamination by using only O-3 gas ambient and O-3 gas ambient combined with IR lamp irradiation.

引用

页码：237 / 240

页数：4